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advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 1 of 25 v2.0 aat 8641 series product information presented is current as of publicati on date. details are subject to change without notice one-cell li-ion battery protection ic features z ideal for one-cell rechargeable li-ion battery packs z high accuracy voltage detection z low current consumption: 3 a supply current (typical) 0.1 a shutdown current z 3-level over current detection: over-current level 1 /over current level 2 / short circuit z wide operating temperature range: 40 ? o c to +85 o c z small sot25 package pin configuration out c out d vn gnd view top general description the aat8641 series are designed for the protection of one-cell rechargeable li-ion battery pack against over charge, over discharge, over current and short circuit. they use cmos process to provide high accuracy voltage detection while consuming relatively low amount of current. each of the aat8641 devices incorporates voltage comparators, bandgap reference voltage generator, signal delay circuit, short circuit detector, and digital control circuit. during the charge process, when the battery voltage is charged to a value higher than 1 c v (over charge threshold voltage), the output of out c pin switches to low level, i.e., the vn pin level. the output of out c pin will switch to high level when the battery voltage is at a level lower than 2 c v (over charge release voltage), or when the charger is disconnected from the battery pack and the battery voltage level is in between 1 c v and 2 c v. during the discharge process, when the battery voltage drops to a value lower than 1 d v (over discharge threshold voltage), the output of out d pin switches to low level immediately after the internal delay time elapses. the output of out d pin will switch to high level when the battery voltage is at a level higher than 2 d v
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 2 of 25 v2.0 aat 8641 series (over-discharge release voltage). over current level 1 voltage ( 1 oc v ) is used to monitor the amount of di scharge current. if the discharge current is high enough to cause vn pin voltage to be greater than 1 oc v , the output of out d pin will switch to low level after a delay time t oc1 . if the load is removed from battery pack, the output of out d will change to high again. the mechanism of short circuit protection is exactly the same as discharge current. if the short circuit current is high enough to cause vn pin voltage to be greater than short v , the output of out d pin would fall to low level after a delay time short t , and the output of out d level will change to high when the load is removed from battery pack. block diagram: out d out c
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 3 of 25 v2.0 aat 8641 series pin description pin no name i/o description 1 vn i voltage detection pin between vn and gnd 2 dd v i power supply input pin 3 gnd ground 4 out d o discharge control pin which connects to external mosfet gate 5 out c o charge control pin which connects to external mosfet gate. absolute maximum ratings characteristics symbol value unit supply voltage dd v 3 . 0 ? to 8.0 v vn pin input voltage vn v 0 . 20 v dd ? to 3 . 0 v dd + v out d pin output voltage dout v 3 . 0 ? to 3 . 0 v dd + v out c pin output voltage cout v 3 . 0 v vn ? to 3 . 0 v dd + v power dissipation d p 150 mw operating temperature range c t 40 ? to +85 o c storage temperature range storage t 40 ? to +125 o c recommended operating conditions test condition min max unit supply voltage, dd v voltage defined as dd v to gnd 1.5 7.0 v out d output voltage gnd dd v v out c output voltage vn dd v v operation voltage and operation current parameter test condition min typ max unit supply current at normal operation mode dd v =3.3v; vn=0v; gnd=0v 3.0 5.0 a standby current at power down mode - - 0.1 a operation voltage between dd v and vn 1.5 20.0 v
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 4 of 25 v2.0 aat 8641 series aat8641a detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.300 4.325 4.350 v over charge release voltage 2 c v detect falling edge of supply voltage 30 . 0 v 1 c ? 25 . 0 v 1 c ? 20 . 0 v 1 c ? v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.420 2.500 2.580 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.3 v d1 +0.4 v d1 +0.5 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.4v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 130 150 170 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 500 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 5 of 25 v2.0 aat 8641 series aat8641b detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.325 4.350 4.375 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.6 v d1 +0.7 v d1 +0.8 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.088 0.125 0.163 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 22.4 32.0 41.6 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 130 150 170 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 500 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 2.8 4.0 5.2 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v 3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 6 of 25 v2.0 aat 8641 series aat8641c detection voltage and dealy time(25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.275 4.300 4.325 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 7 of 25 v2.0 aat 8641 series aat8641d detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.255 4.280 4.305 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 110 130 150 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 490 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 8 of 25 v2.0 aat 8641 series aat8641e detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.255 4.280 4.305 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.5 v d1 +0.6 v d1 +0.7 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 9 of 25 v2.0 aat 8641 series aat8641f detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.300 4.325 4.350 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.25 v c1 -0.20 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.420 2.500 2.580 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.3 v d1 +0.4 v d1 +0.5 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.4v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; 1 2 10 k out c low level resistance col r dd v =4.5v; 150 602 2,380 k out d high level resistance doh r dd v =3.5v; 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 10 of 25 v2.0 aat 8641 series aat8641g detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.325 4.350 4.375 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.6 v d1 +0.7 v d1 +0.8 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.088 0.125 0.163 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 22.4 32.0 41.6 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 180 200 220 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 510 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 2.8 4.0 5.2 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 11 of 25 v2.0 aat 8641 series aat8641h detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.275 4.300 4.325 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 130 150 170 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 500 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v; 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v; 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v; 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v; vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 12 of 25 v2.0 aat 8641 series aat8641i detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.275 4.300 4.325 v over charge release voltage 2 c v detect falling edge of supply voltage 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage 08 . 0 v 1 d ? v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 110 130 150 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 490 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 13 of 25 v2.0 aat 8641 series aat8641j detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.255 4.280 4.305 v over charge release voltage 2 c v detect falling edge of supply voltage 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage 08 . 0 v 1 d ? v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 180 200 220 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 510 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 14 of 25 v2.0 aat 8641 series aat8641k detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.225 4.250 4.275 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.25 v c1 -0.20 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.5 v d1 +0.6 v d1 +0.7 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 8 . 2 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with 1 oc t delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with 2 oc t delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r dd v =3.5v; out c =3.0v;vn=0v 1 2 10 k out c low level resistance col r dd v =4.5v; out c =0.5v;vn=0v 150 602 2,380 k out d high level resistance doh r dd v =3.5v; out d =3.0v;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r dd v =1.8v; out d =0.5v;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r dd v =1.8v; vn=0v 100 300 900 k internal resistance between vn and gnd vng r dd v =3.5v; vn=3.5v 50 150 300 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 15 of 25 v2.0 aat 8641 series sumary of aat8641 detection voltage and delay time (25 ) parameter symbol device min typ max unit 1 c v aat8641a 4.300 4.325 4.350 v aat8641b 4.325 4.350 4.375 v aat8641c 4.275 4.300 4.325 v aat8641d 4.255 4.280 4.305 v aat8641e 4.255 4.280 4.305 v aat8641f 4.300 4.325 4.350 v aat8641g 4.325 4.350 4.375 v aat8641h 4.275 4.30 4.325 v aat8641i 4.275 4.30 4.325 v aat8641j 4.255 4.280 4.305 v over charge threshold voltage aat8641k 4.225 4.250 4.275 v 2 c v aat8641a 30 . 0 v 1 c ? 25 . 0 v 1 c ? 20 . 0 v 1 c ? v aat8641b 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641c 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641d 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641e 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641f 30 . 0 v 1 c ? vc1-0.25 20 . 0 v 1 c ? v aat8641g 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641h 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641i 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v aat8641j 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v over charge release voltage aat8641k 25 . 0 v 1 c ? 20 . 0 v 1 c ? 15 . 0 v 1 c ? v 1 d v aat8641a 2.420 2.500 2.580 v aat8641b 2.220 2.300 2.380 v aat8641c 2.220 2.300 2.380 v aat8641d 2.201 2.281 2.361 v aat8641e 2.201 2.281 2.361 v aat8641f 2.420 2.500 2.580 v aat8641g 2.220 2.300 2.380 v aat8641h 2.220 2.300 2.380 v aat8641i 2.220 2.300 2.380 v aat8641j 2.201 2.281 2.361 v over discharge threshold voltage aat8641k 2.201 2.281 2.361 v
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 16 of 25 v2.0 aat 8641 series summary of aat8641 detection voltage and delay time (25 ) parameter symbol device min typ max unit 2 d v aat8641a vd1+0.3 vd1+0.4 vd1+0.5 v aat8641b vd1+0.6 vd1+0.7 vd1+0.8 v aat8641c 08 . 0 v 1 d ? vd1 vd1+0.08 v aat8641d 08 . 0 v 1 d ? vd1 vd1+0.08 v aat8641e vd1+0.5 vd1+0.6 vd1+0.7 v aat8641f vd1+0.3 vd1+0.4 vd1+0.5 v aat8641g vd1+0.6 vd1+0.7 vd1+0.8 v aat8641h 08 . 0 v 1 d ? vd1 vd1+0.08 v aat8641i 08 . 0 v 1 d ? vd1 vd1+0.08 v aat8641j 08 . 0 v 1 d ? vd1 vd1+0.08 v over discharge release voltage aat8641k vd1+0.5 vd1+0.6 vd1+0.7 v 1 c t aat8641a 0.700 1.000 1.300 s aat8641b 0.088 0.125 0.163 s aat8641c 0.700 1.000 1.300 s aat8641d 0.700 1.000 1.300 s aat8641e 0.700 1.000 1.300 s aat8641f 0.700 1.000 1.300 s aat8641g 0.088 0.125 0.163 s aat8641h 0.700 1.000 1.300 s aat8641i 0.700 1.000 1.300 s aat8641j 0.700 1.000 1.300 s over charge delay time aat8641k 0.700 1.000 1.300 s 1 d t aat8641a 87.5 125.0 162.5 ms aat8641b 22.4 32.0 41.6 ms aat8641c 87.5 125.0 162.5 ms aat8641d 87.5 125.0 162.5 ms aat8641e 87.5 125.0 162.5 ms aat8641f 87.5 125.0 162.5 ms aat8641g 22.4 32.0 41.6 ms aat8641h 87.5 125.0 162.5 ms aat8641i 87.5 125.0 162.5 ms aat8641j 87.5 125.0 162.5 ms over discharge delay time aat8641k 87.5 125.0 162.5 ms
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 17 of 25 v2.0 aat 8641 series summary of aat8641 detection voltage and delay time (25 ) parameter symbol device min typ max unit 1 oc v aat8641a 130 150 170 mv aat8641b 130 150 170 mv aat8641c 80 100 120 mv aat8641d 110 130 150 mv aat8641e 80 100 120 mv aat8641f 80 100 120 mv aat8641g 180 200 220 mv aat8641h 130 150 170 mv aat8641i 110 130 150 mv aat8641j 180 200 220 mv over current level 1 detection voltage aat8641k 80 100 120 mv 2 oc v aat8641a 400 500 600 mv aat8641b 400 500 600 mv aat8641c 400 480 600 mv aat8641d 400 490 600 mv aat8641e 400 480 600 mv aat8641f 400 480 600 mv aat8641g 400 510 600 mv aat8641h 400 500 600 mv aat8641i 400 490 600 mv aat8641j 400 510 600 mv over current level 2 detection voltage aat8641k 400 480 600 mv 1 oc t aat8641a 5.6 8.0 10.4 ms aat8641b 2.8 4.0 5.2 ms aat8641c 5.6 8.0 10.4 ms aat8641d 5.6 8.0 10.4 ms aat8641e 5.6 8.0 10.4 ms aat8641f 5.6 8.0 10.4 ms aat8641g 2.8 4.0 5.2 ms aat8641h 5.6 8.0 10.4 ms aat8641i 5.6 8.0 10.4 ms aat8641j 5.6 8.0 10.4 ms over current level 1 detection delay time aat8641k 5.6 8.0 10.4 ms
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 18 of 25 v2.0 aat 8641 series timing chart aat8641 (charge and discharge) chr v d1 v d2 v c2 v c1 v out c out d
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 19 of 25 v2.0 aat 8641 series timing chart aat8641 (unusual charge current, over current, and short circuit) out d out c time
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 20 of 25 v2.0 aat 8641 series typical application li battery dd v gnd vn out d out c 1 c f 1 . 0 1 r 2 r 100 k 1 + ?
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 21 of 25 v2.0 aat 8641 series package dimension
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 22 of 25 v2.0 aat 8641 series package dimension (cont.) dimensions in millimeters deminsions in inches symbols min typ max min typ max a 1.05 1.20 1.35 0.041 0.047 0.053 a1 0.05 0.10 0.15 0.002 0.004 0.006 a2 1.00 1.10 1.20 0.039 0.043 0.047 b 0.25 ------ 0.50 0.010 ------ 0.020 b1 0.25 0.40 0.45 0.010 0.016 0.018 c 0.08 ------ 0.20 0.003 ------ 0.008 c1 0.08 0.11 0.15 0.003 0.004 0.006 d 2.70 2.90 3.00 0.106 0.114 0.118 e 2.60 2.80 3.00 0.102 0.110 0.118 e1 1.50 1.60 1.70 0.059 0.063 0.067 l 0.35 0.45 0.55 0.014 0.018 0.022 l1 0.60 ref 0.024 ref e 0.95 bsc 0.037 bsc e1 1.90 bsc 0.075 bsc 0 5 10 0 5 10 1 3 5 7 3 5 7 2 6 8 10 6 8 10 note: 1. dimension d does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs s hall not exceed 0.20 millimeters per side. 2. dimension e1 does not include in terlead flash or protrusion. interlead flash or protrusion shal l not exceed 0.20millimeters per side. 3. the package top may be samller than package bottom. dimension d and e1 are determined at the ou termost extremes of the plastic body exclusive of mold flash, tie bar burrs, interlead flash and gate burrs, but including any mismatch between the top and bottom of the molded body. 4. the section b-b apply to the flat secti on of the lead between 0.08 millimeteres and 0.15 millimeters from the lead tip 5. lead frame material: eftec -64t 1/2h or h.
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 23 of 25 v2.0 aat 8641 series tape and reel
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 24 of 25 v2.0 aat 8641 series tape and reel (cont.) x.xxx x 0.0025 x.xxx 0.006 x.xx 0.025 x.x 0.10 x 0.25 unit: millimeters
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 25 of 25 v2.0 aat 8641 series ordering information

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